A robust small signal modeling of GaAs MESFETs
The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mai...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 620 vol.1 |
|---|---|
| container_issue | |
| container_start_page | 617 |
| container_title | |
| container_volume | |
| creator | Mokari, M.E. Tan, T.H. |
| description | The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics.< > |
| doi_str_mv | 10.1109/MWSCAS.1990.140794 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_140794</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>140794</ieee_id><sourcerecordid>140794</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-902819e5842f5515018c3271b2c143b5d5daa4374cda5fd0d94a150a5291b9823</originalsourceid><addsrcrecordid>eNotj1FLwzAUhQMiqHN_YE_5A633JrkkeSxlTmHDhyo-jtsmHZF2lWY--O8tzPNy4OPjwBFig1Aign86fDZ11ZTo_QIMWG9uxANYBxrAId2Jdc5fsMQQWND3oqzkPLU_-SLzyMMgczqdeZDjFOKQzic59XLHVZaHbfO8fc-P4rbnIcf1f6_Ex4Lrl2L_tnutq32R0KpL4UE59JGcUT0REqDrtLLYqg6NbilQYDbami4w9QGCN7xYTMpj653SK7G57qYY4_F7TiPPv8frI_0HKU8-tg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A robust small signal modeling of GaAs MESFETs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mokari, M.E. ; Tan, T.H.</creator><creatorcontrib>Mokari, M.E. ; Tan, T.H.</creatorcontrib><description>The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics.< ></description><identifier>ISBN: 0780300815</identifier><identifier>ISBN: 9780780300811</identifier><identifier>DOI: 10.1109/MWSCAS.1990.140794</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrical resistance measurement ; Equivalent circuits ; Frequency estimation ; Frequency measurement ; Gallium arsenide ; Integrated circuit modeling ; MESFETs ; Microwave measurements ; Robustness ; Scattering parameters</subject><ispartof>Proceedings of the 33rd Midwest Symposium on Circuits and Systems, 1990, p.617-620 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/140794$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/140794$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mokari, M.E.</creatorcontrib><creatorcontrib>Tan, T.H.</creatorcontrib><title>A robust small signal modeling of GaAs MESFETs</title><title>Proceedings of the 33rd Midwest Symposium on Circuits and Systems</title><addtitle>MWSCAS</addtitle><description>The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics.< ></description><subject>Electrical resistance measurement</subject><subject>Equivalent circuits</subject><subject>Frequency estimation</subject><subject>Frequency measurement</subject><subject>Gallium arsenide</subject><subject>Integrated circuit modeling</subject><subject>MESFETs</subject><subject>Microwave measurements</subject><subject>Robustness</subject><subject>Scattering parameters</subject><isbn>0780300815</isbn><isbn>9780780300811</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1FLwzAUhQMiqHN_YE_5A633JrkkeSxlTmHDhyo-jtsmHZF2lWY--O8tzPNy4OPjwBFig1Aign86fDZ11ZTo_QIMWG9uxANYBxrAId2Jdc5fsMQQWND3oqzkPLU_-SLzyMMgczqdeZDjFOKQzic59XLHVZaHbfO8fc-P4rbnIcf1f6_Ex4Lrl2L_tnutq32R0KpL4UE59JGcUT0REqDrtLLYqg6NbilQYDbami4w9QGCN7xYTMpj653SK7G57qYY4_F7TiPPv8frI_0HKU8-tg</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>Mokari, M.E.</creator><creator>Tan, T.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1990</creationdate><title>A robust small signal modeling of GaAs MESFETs</title><author>Mokari, M.E. ; Tan, T.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-902819e5842f5515018c3271b2c143b5d5daa4374cda5fd0d94a150a5291b9823</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Electrical resistance measurement</topic><topic>Equivalent circuits</topic><topic>Frequency estimation</topic><topic>Frequency measurement</topic><topic>Gallium arsenide</topic><topic>Integrated circuit modeling</topic><topic>MESFETs</topic><topic>Microwave measurements</topic><topic>Robustness</topic><topic>Scattering parameters</topic><toplevel>online_resources</toplevel><creatorcontrib>Mokari, M.E.</creatorcontrib><creatorcontrib>Tan, T.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mokari, M.E.</au><au>Tan, T.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A robust small signal modeling of GaAs MESFETs</atitle><btitle>Proceedings of the 33rd Midwest Symposium on Circuits and Systems</btitle><stitle>MWSCAS</stitle><date>1990</date><risdate>1990</risdate><spage>617</spage><epage>620 vol.1</epage><pages>617-620 vol.1</pages><isbn>0780300815</isbn><isbn>9780780300811</isbn><abstract>The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSCAS.1990.140794</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780300815 |
| ispartof | Proceedings of the 33rd Midwest Symposium on Circuits and Systems, 1990, p.617-620 vol.1 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_140794 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrical resistance measurement Equivalent circuits Frequency estimation Frequency measurement Gallium arsenide Integrated circuit modeling MESFETs Microwave measurements Robustness Scattering parameters |
| title | A robust small signal modeling of GaAs MESFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T04%3A03%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20robust%20small%20signal%20modeling%20of%20GaAs%20MESFETs&rft.btitle=Proceedings%20of%20the%2033rd%20Midwest%20Symposium%20on%20Circuits%20and%20Systems&rft.au=Mokari,%20M.E.&rft.date=1990&rft.spage=617&rft.epage=620%20vol.1&rft.pages=617-620%20vol.1&rft.isbn=0780300815&rft.isbn_list=9780780300811&rft_id=info:doi/10.1109/MWSCAS.1990.140794&rft_dat=%3Cieee_6IE%3E140794%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=140794&rfr_iscdi=true |