A robust small signal modeling of GaAs MESFETs

A robust small signal modeling of GaAs MESFETs

The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mai...

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Bibliographische Detailangaben
Hauptverfasser: Mokari, M.E., Tan, T.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrical resistance measurement
Equivalent circuits
Frequency estimation
Frequency measurement
Gallium arsenide
Integrated circuit modeling
MESFETs
Microwave measurements
Robustness
Scattering parameters
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Beschreibung
Zusammenfassung:The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics.< >
DOI:10.1109/MWSCAS.1990.140794