A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (

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Bibliographische Detailangaben
Hauptverfasser:	Vaed, K., Eshun, E., Bolam, R., Stein, K., Coolbaugh, D., Ahlgren, D., Dunn, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance High K dielectric materials High-K gate dielectrics Leakage current Linearity Manufacturing MIM capacitors Radio frequency Tin Voltage
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (
DOI:	10.1109/SMIC.2004.1398166