High-performance nonvolatile HfO2 nanocrystal memory

We demonstrate high-performance nonvolatile HfO 2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900/spl deg/C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 /spl sim/ 1.9 × 10/sup 12/ cm/sup -2/ with an avera...

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Veröffentlicht in:	IEEE electron device letters 2005-03, Vol.26 (3), p.154-156
Hauptverfasser:	LIN, Yu-Hsien, CHIEN, Chao-Hsin, LIN, Ching-Tzung, CHANG, Chun-Yen, LEI, Tan-Fu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chaos CMOS technology Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Fabrication Hafnium oxide Integrated circuits Integrated circuits by function (including memories and processors) Nanocrystals nonvolatile memories Nonvolatile memory phase separation Plasma temperature Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Spectroscopy
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Beschreibung
Zusammenfassung:	We demonstrate high-performance nonvolatile HfO 2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900/spl deg/C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 /spl sim/ 1.9 × 10/sup 12/ cm/sup -2/ with an average size
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2004.842727