A general model of the CMOS buried double junction photodetector

A general model of the CMOS buried double junction photodetector

In this paper, the analytical expressions of the buried double junction (BDJ) leakage currents are proposed. Associated to the photocurrents equations, the BDJ equivalent electrical circuit is deduced. However, in order to not limit this model to the photoconductive mode, an extension of the Ebers-M...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Feruglio, S., Haned, F., Vasilescu, G., Chouikha, M.B., Sou, G., Hanna, V.F., Alquie, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
Circuit simulation
Dark current
Leakage current
Nonlinear optics
Optical filters
Optical noise
Photoconducting devices
Photodetectors
Semiconductor device modeling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, the analytical expressions of the buried double junction (BDJ) leakage currents are proposed. Associated to the photocurrents equations, the BDJ equivalent electrical circuit is deduced. However, in order to not limit this model to the photoconductive mode, an extension of the Ebers-Moll equivalent circuit is adopted. Next, the incremental AC model, as well as the noise model of the device have been obtained. Measurement shows good agreement with simulation, hence validating our model
DOI:10.1109/IST.2004.1397283