A wavelet-based approach to analyze the electromagnetic wave effects on microwave transistors

A wavelet-based approach to analyze the electromagnetic wave effects on microwave transistors

A new wavelet-based simulation approach for the analysis and simulation of microwavelmm-wave transistors is presented. The Daubechies-base wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows forming fine and coarse grids in locations where variable solut...

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Bibliographische Detailangaben
Hauptverfasser: Movahhedi, M., Abdipour, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Electromagnetic analysis
Electromagnetic scattering
Finite difference methods
Mesh generation
Microwave transistors
Poisson equations
Semiconductor devices
Time domain analysis
Wavelet analysis
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Beschreibung
Zusammenfassung:A new wavelet-based simulation approach for the analysis and simulation of microwavelmm-wave transistors is presented. The Daubechies-base wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. Also, some modifications for using the generated nonuniform mesh, which has been obtained based on the dc solution, in the ac analysis is presented.
DOI:10.1109/MMET.2004.1397057