On the modeling of semiconductor quantum effects for circuit simulation

In this paper, we discuss the impact of quantum effects on the functionality of classical circuit concepts. To be most general we concentrate on MOS semiconductors, relying on the multiplicity of discussions in the literature. Instead of focussing on device simulations we investigate the impact of p...

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Hauptverfasser:	Felgenhauer, F., Fabel, S., Mathis, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Circuit simulation Computer interfaces Current density Electric, optical and optoelectronic circuits Electronics Electrons Energy states Exact sciences and technology Insulation Magnetic semiconductors Molecular electronics, nanoelectronics Quantum computing Resonance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Theoretical study. Circuits analysis and design Tunneling
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Beschreibung
Zusammenfassung:	In this paper, we discuss the impact of quantum effects on the functionality of classical circuit concepts. To be most general we concentrate on MOS semiconductors, relying on the multiplicity of discussions in the literature. Instead of focussing on device simulations we investigate the impact of parasitic quantum effects in classical circuits built by the nano-scaled devices.
DOI:	10.1109/NANO.2004.1392301