Highly thermal robust Ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration...

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Hauptverfasser:	YUN, Jang-Gn, OH, Soon-Young, LEE, Jeong-Gun, LEE, Hi-Deok, JI, Hee-Hwan, HUANG, Bin-Feng, PARK, Seong-Hyung, LEE, Heui-Seung, KIM, Dae-Byung, KIM, Ui-Sik, CHA, Han-Seob, HU, Sang-Bum
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Applied sciences CMOS technology Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Germanium silicon alloys Integrated circuits Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicidation Silicon germanium Temperature Thermal stability Tin Ultra large scale integration
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Beschreibung
Zusammenfassung:	Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration increases in Si/sub 1-x/Ge/sub x/. Low temperature silicidation and wide range of RTP process window are achieved as well as the improvement of the thermal stability according to different dopant types by the subsequent Co and TiN capping layer above NiPt on Si/sub 1-x/Ge/sub x/.
DOI:	10.1109/NANO.2004.1392238