Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs
First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/
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| creator | Sadaka, M. Thean, A.V.-Y. Barr, A. Tekleab, D. Kalpat, S. White, T. Nguyen, T. Mora, R. Beckage, P. Jawarani, D. Zollner, S. Kottke, M. Liu, R. Canonico, M. Xie, Q.-H. Wang, X.-D. Parsons, S. Eades, D. Zavala, M. Nguyen, B.-Y. Mazure, C. Mogab, J. |
| description | First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/ |
| doi_str_mv | 10.1109/SOI.2004.1391620 |
| format | Conference Proceeding |
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A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. Functional SRAM bit cells down to V/sub dd/=0.9 V were also demonstrated.</description><identifier>ISBN: 9780780384972</identifier><identifier>ISBN: 0780384970</identifier><identifier>DOI: 10.1109/SOI.2004.1391620</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bonding ; CMOSFETs ; Contact resistance ; Degradation ; Fabrication ; Insulation ; MOS devices ; Random access memory ; Silicides ; Stress</subject><ispartof>2004 IEEE International SOI Conference (IEEE Cat. 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No.04CH37573)</title><addtitle>SOI</addtitle><description>First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/<45 nm exhibited superior short-channel control and comparable reliability to SOI devices. A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. 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No.04CH37573)</btitle><stitle>SOI</stitle><date>2004</date><risdate>2004</risdate><spage>209</spage><epage>211</epage><pages>209-211</pages><isbn>9780780384972</isbn><isbn>0780384970</isbn><abstract>First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/<45 nm exhibited superior short-channel control and comparable reliability to SOI devices. A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. Functional SRAM bit cells down to V/sub dd/=0.9 V were also demonstrated.</abstract><pub>IEEE</pub><doi>10.1109/SOI.2004.1391620</doi></addata></record> |
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| identifier | ISBN: 9780780384972 |
| ispartof | 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004, p.209-211 |
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| language | eng |
| recordid | cdi_ieee_primary_1391620 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bonding CMOSFETs Contact resistance Degradation Fabrication Insulation MOS devices Random access memory Silicides Stress |
| title | Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs |
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