Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that de...

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Bibliographische Detailangaben

Hauptverfasser:	Ahn, C.G., Cho, W.J., Im, K.J., Yang, J.H., Baek, I.B., Baek, S.K., Lee, S.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Dry etching Electric resistance Electric variables Fabrication Immune system Ion implantation Length measurement MOSFETs Nanoscale devices Silicon
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