Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that de...

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Bibliographische Detailangaben
Hauptverfasser: Ahn, C.G., Cho, W.J., Im, K.J., Yang, J.H., Baek, I.B., Baek, S.K., Lee, S.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dry etching
Electric resistance
Electric variables
Fabrication
Immune system
Ion implantation
Length measurement
MOSFETs
Nanoscale devices
Silicon
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Beschreibung
Zusammenfassung:We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that devices with a recessed S/D structure have a better electrical properties than those with a elevated S/D structure.
DOI:10.1109/SOI.2004.1391619