Full/partial depletion effects in FinFETs

Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias.

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Bibliographische Detailangaben
Hauptverfasser:	Xiong, W., Cleavelin, C.R., Wise, R., Yu, S., Pas, M., Zaman, R.J., Gostkowski, M., Matthews, K., Maleville, C., Patruno, P., Tsu-Jae King, Colinge, J.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Doping Electronics Exact sciences and technology FinFETs Hafnium Impurities Lithography MOSFETs Oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Transconductance Transistors Voltage
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Beschreibung
Zusammenfassung:	Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias.
DOI:	10.1109/SOI.2004.1391613