MOS-transistors on the Si:Ho in the technology of SHF-devices

MOS-transistors on the Si:Ho in the technology of SHF-devices

MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by holmium allows the improving of the character...

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Bibliographische Detailangaben
Hauptverfasser: Samokhval, V.V., Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Helium
Human computer interaction
MOSFET circuits
Rail to rail outputs
Roentgenium
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Beschreibung
Zusammenfassung:MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by holmium allows the improving of the characteristics of MOS structures.
DOI:10.1109/CRMICO.2004.183328