Ohmic and barrier contacts to SiC- and GaN-based microwave diodes

Ohmic and barrier contacts to SiC- and GaN-based microwave diodes

The Au-TiB/sub x/(Ti)-Al-Ti-n-GaN ohmic contacts and Au-ZrB/sub x/-n-6H-SiC barrier contacts were studied before and after rapid thermal annealing at T=700 and 800/spl deg/C. We measured the component concentration depth profiles and electrical characteristics of the contact systems. It was shown th...

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Hauptverfasser: Boltovets, N.S., Lvanov, V.N., Sveshnikov, Y.N., Belyaev, A.E., Avksentiev, A.Y., Konakova, R.V., Kudryk, Y.Y., Kurakin, A.M., Milenin, V.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Buffer layers
Gallium nitride
Gold
Ohmic contacts
Rapid thermal annealing
Schottky barriers
Schottky diodes
Semiconductor diodes
Silicon carbide
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Zusammenfassung:The Au-TiB/sub x/(Ti)-Al-Ti-n-GaN ohmic contacts and Au-ZrB/sub x/-n-6H-SiC barrier contacts were studied before and after rapid thermal annealing at T=700 and 800/spl deg/C. We measured the component concentration depth profiles and electrical characteristics of the contact systems. It was shown that TiB/sub x/ buffer layers are promising for application in ohmic contacts to n-GaN and ZrB/sub x/ in barrier contacts to n-6H SiC.
DOI:10.1109/CRMICO.2004.183318