Control of influence of Auger recombination on the threshold in asymmetric quantum-well lasers

Control of influence of Auger recombination on the threshold in asymmetric quantum-well lasers

In the work, general description of the Auger recombination (AR) processes in quantum-well (QW) heterostructure is presented and new conception of weakening the temperature sensitivity of the threshold in asymmetric QW heterolasers is suggested. Numerical simulation is approved on an example of the...

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Bibliographische Detailangaben
Hauptverfasser: Kononenko, V.K., Ushakov, D.V., Sukhoivanov, I.A., Mashoshina, O.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diode lasers
Effective mass
Electron optics
Electronic mail
Optical control
Optical sensors
Quantum well lasers
Radiative recombination
Spontaneous emission
Temperature dependence
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Beschreibung
Zusammenfassung:In the work, general description of the Auger recombination (AR) processes in quantum-well (QW) heterostructure is presented and new conception of weakening the temperature sensitivity of the threshold in asymmetric QW heterolasers is suggested. Numerical simulation is approved on an example of the GaInAs-GaInAsP laser system.
DOI:10.1109/LFNM.2004.1382436