Mobility of strained and dislocated In/sub x/Ga/sub 1-x/As semiconductor material

A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched In/sub x/Ga/sub 1-x/As on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing ind...

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Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1992-06, Vol.39 (6), p.1288-1294
Hauptverfasser:	Kuhn, K.J., Darling, R.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Capacitive sensors Crystalline materials Crystallization Electrons Gallium arsenide Indium Lattices MESFETs Semiconductor materials
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