Mobility of strained and dislocated In/sub x/Ga/sub 1-x/As semiconductor material

Mobility of strained and dislocated In/sub x/Ga/sub 1-x/As semiconductor material

A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched In/sub x/Ga/sub 1-x/As on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing ind...

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Veröffentlicht in:IEEE transactions on electron devices 1992-06, Vol.39 (6), p.1288-1294
Hauptverfasser: Kuhn, K.J., Darling, R.B.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer deposition
Capacitive sensors
Crystalline materials
Crystallization
Electrons
Gallium arsenide
Indium
Lattices
MESFETs
Semiconductor materials
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Zusammenfassung:A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched In/sub x/Ga/sub 1-x/As on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing indium concentration are possible, but only occur if the density of misfit dislocations can be held below a critical value.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.137306