Transient response of III-V field-effect transistors to heavy-ion irradiation

The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relax...

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Veröffentlicht in:	IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3324-3331
Hauptverfasser:	McMorrow, D., Boos, J.B., Knudson, A.R., Lotshaw, W.T., Doe Park, Melinger, J.S., Bennett, B.R., Torres, A., Ferlet-Cavrois, V., Sauvestre, J.-E., D'Hose, C., Flament, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlSb charge collection Charge measurement Current measurement FETs GaAs Gallium arsenide Gallium arsenides HEMT HEMTs High electron mobility transistors III-V semiconductor materials InAlAs InAs Indium arsenides Indium compounds Indium gallium arsenide Indium gallium arsenides InGaAs InP Irradiation MESFET MESFETs Semiconductor devices single-event transient single-event upset Transient response Transistors
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Zusammenfassung:	The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relaxation times for the GaAs and InAlAs/InGaAs devices, with a much faster recovery from the ionizing event observed for the AlSb/InAs HEMTs.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2004.839529