Reliability properties of low-voltage ferroelectric capacitors and memory arrays

We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on device and materials reliability 2004-09, Vol.4 (3), p.436-449
Hauptverfasser:	Rodriguez, J.A., Remack, K., Boku, K., Udayakumar, K.R., Aggarwal, S., Summerfelt, S.R., Celii, F.G., Martin, S., Hall, L., Taylor, K., Moise, T., McAdams, H., McPherson, J., Bailey, R., Fox, G., Depner, M.
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Arrays Bit distribution Capacitors CMOS logic circuits CMOS process Degradation Durability fatigue Ferroelectric films Ferroelectric materials ferroelectric memory Ferroelectricity FRAM imprint Logic Logic arrays Low voltage MOCVD polarization PZT retention Switching Temperature
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Beschreibung
Zusammenfassung:	We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (
ISSN:	1530-4388 1558-2574
DOI:	10.1109/TDMR.2004.837210