SPICE macro models for annular MOSFETs

SPICE macro models for annular MOSFETs

MOSFETs with annular, or enclosed, geometries are now finding frequent use in rad-hard by design (RHBD) approaches to designing custom CMOS ASICs for aerospace applications. Unfortunately, these devices are not accurately modeled by the BSIM3 models normally provided for devices with ordinary rectan...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Strohbehn, K., Martin, M.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
CMOS process
Costs
Geometry
MOSFETs
Radiation hardening
Semiconductor device modeling
Single event upset
Solid modeling
SPICE
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Beschreibung
Zusammenfassung:MOSFETs with annular, or enclosed, geometries are now finding frequent use in rad-hard by design (RHBD) approaches to designing custom CMOS ASICs for aerospace applications. Unfortunately, these devices are not accurately modeled by the BSIM3 models normally provided for devices with ordinary rectangular gates. We present a SPICE macro model for an annular n-channel MOSFET to account for the annular geometry effects on gate overlap capacitance and output conductance.
ISSN:1095-323X
2996-2358
DOI:10.1109/AERO.2004.1368031