Quantum dot semiconductor lasers

Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were developed. Recent results will be presented and partially discussed in comparison to QW lasers.

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Bibliographische Detailangaben
Hauptverfasser:	Reithmaier, J.P., Deubert, S., Somers, A., Kaiser, W., Forchel, A., Auzanneau, S., Calligaro, M., Michel, N., Bansropun, S., Krakowski, M., Sumpf, B., Erbert, G., Fricke, J., Trankle, G., Hadass, D., Bilenca, A., Dery, H., Mikhelashvili, B., Eisenstein, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Brightness Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optical materials Optics Physics Power generation Power lasers Quantum dot lasers Semiconductor lasers Semiconductor lasers laser diodes Semiconductor materials Semiconductor optical amplifiers Temperature dependence US Department of Transportation
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Beschreibung
Zusammenfassung:	Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were developed. Recent results will be presented and partially discussed in comparison to QW lasers.
DOI:	10.1109/LEOS.2004.1363182