Recent advances in AlGaN-based deep-UV LEDs

We will overview the challenges and performance of AlGaN-based multi-quantum well LEDs in the 275-290 nm range. Recent progress in materials and device development has enabled output powers of > 1 mW at 290 nm

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Bibliographische Detailangaben
Hauptverfasser:	Crawford, M.H., Fischer, A.J., Allerman, A.A., Bogart, K.H.A., Lee, S.R., Kaplar, R.J., Chow, W.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Capacitive sensors Electroluminescent devices Gallium nitride Laboratories Light emitting diodes Photonic band gap Power generation Substrates Thermal management
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Beschreibung
Zusammenfassung:	We will overview the challenges and performance of AlGaN-based multi-quantum well LEDs in the 275-290 nm range. Recent progress in materials and device development has enabled output powers of > 1 mW at 290 nm