CDF run IIb silicon detector: the innermost layer

CDF run IIb silicon detector: the innermost layer

The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via l...

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Veröffentlicht in:IEEE transactions on nuclear science 2004-10, Vol.51 (5), p.2215-2219
Hauptverfasser: Merkel, P., Azzi, P., Bacchetta, N., Bisello, D., Busetto, G., Hara, K., Kim, S., Manea, C., Wang, Z., Behari, S., Maksimovic, P., Benjamin, D., Cabrera, S., Kruse, M., Bolla, G., Bortoletto, D., Canepa, A., Fernandez, J.P., Booth, P., Cooke, P., Cascella, M., Cardoso, G., Derylo, G., Flaugher, B., Hrycyk, M., Kuznetsova, N., Lukens, P., Nelson, T., Orlov, Y., Wester, W., Yun, J.C., Chertok, M., Holbrook, B., Lander, R., Landry, T., Pellett, D., Soha, A., Yao, W., Ciobanu, C.I., Junk, T., Feng, E.J., Freeman, J., Galtieri, L., Garcia-Sciveres, M., Haber, C., Lujan, P.J., Mandelli, E., Weber, M., Zetti, F., Zimmermann, S., Goldstein, J., Harr, R., Hill, C., Himmel, A., Incandela, J., Stuart, D., Kobayashi, K., Nakano, I., Tanaka, R., Kong, D.J., Yang, Y.C., Lauhakangas, R., Orava, R., Osterberg, K., Lu, R.-S., Min, S.N., Okusawa, T., Yamamoto, K., Tavi, M., Zucchelli, S., Hong, S.C., Jeon, E.J., Joo, K.K., Lee, J.
Format: Artikel
Sprache:eng
Schlagworte:
Cables
Detectors
Educational institutions
Laboratories
Physics
Prototypes
Silicon
US Department of Energy
USA Councils
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Beschreibung
Zusammenfassung:The innermost layer (L00) of the Run IIa silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run IIa. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z(/spl sim/70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal-to-noise values.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.835876