Atmospheric plasma deposition of abrasion resistant coatings on plastic

Summary form only given. The plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films has been examined in a low temperature, atmospheric pressure discharge. A mixture of 2.0 vol% oxygen in helium was utilized in a capacitive discharge operating at 100 W RF power and a neutral gas...

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Hauptverfasser: Nowling, G., Babayan, S., Xiawan Yang, Moravej, M., Yajima, M., Hicks, R., Hoffman, W.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Summary form only given. The plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films has been examined in a low temperature, atmospheric pressure discharge. A mixture of 2.0 vol% oxygen in helium was utilized in a capacitive discharge operating at 100 W RF power and a neutral gas temperature of /spl sim/100/spl deg/C. Several silicon precursors were studied, including tetramethyldisiloxane (TMDSO), tetramethylcy-clotetrasiloxane (TMCTS), tetraethoxysilane (TEOS), and hexa-methyldisilazane (HMDSN). After growth, the thickness, refractive index and composition of the silicon dioxide films were determined by ellipsometry, Fourier-transform infrared spectroscopy and Rutherford backscattering. Abrasion tests were performed on films deposited on plastic substrates. Glass films could be deposited at rates up to 1.0 micron/minute using TMDSO. However, these films contained 5.0 to 10.0 atom% carbon and hydrogen, and abraided easily during scratch tests. Feeding HMDSN to the oxygen plasma resulted in the deposition of silicon dioxide films that were free of nitrogen and carbon (
ISSN:0730-9244
2576-7208
DOI:10.1109/PLASMA.2004.1339720