Atmospheric plasma deposition of abrasion resistant coatings on plastic
Summary form only given. The plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films has been examined in a low temperature, atmospheric pressure discharge. A mixture of 2.0 vol% oxygen in helium was utilized in a capacitive discharge operating at 100 W RF power and a neutral gas...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Summary form only given. The plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films has been examined in a low temperature, atmospheric pressure discharge. A mixture of 2.0 vol% oxygen in helium was utilized in a capacitive discharge operating at 100 W RF power and a neutral gas temperature of /spl sim/100/spl deg/C. Several silicon precursors were studied, including tetramethyldisiloxane (TMDSO), tetramethylcy-clotetrasiloxane (TMCTS), tetraethoxysilane (TEOS), and hexa-methyldisilazane (HMDSN). After growth, the thickness, refractive index and composition of the silicon dioxide films were determined by ellipsometry, Fourier-transform infrared spectroscopy and Rutherford backscattering. Abrasion tests were performed on films deposited on plastic substrates. Glass films could be deposited at rates up to 1.0 micron/minute using TMDSO. However, these films contained 5.0 to 10.0 atom% carbon and hydrogen, and abraided easily during scratch tests. Feeding HMDSN to the oxygen plasma resulted in the deposition of silicon dioxide films that were free of nitrogen and carbon ( |
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ISSN: | 0730-9244 2576-7208 |
DOI: | 10.1109/PLASMA.2004.1339720 |