An ultra-high power amplifier and switch arrays on single wafer
A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overm...
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creator | Guo, J. Tantawi, S.G. |
description | A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations. |
doi_str_mv | 10.1109/MWSYM.2004.1339153 |
format | Conference Proceeding |
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This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. 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We present the general design of the array and show several implementations.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Linear particle accelerator</subject><subject>Microwave amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Power amplifiers</subject><subject>Power semiconductor switches</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Semiconductor devices</subject><subject>Semiconductor diodes</subject><subject>Semiconductor waveguides</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Waveguide discontinuities</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780383311</isbn><isbn>9780780383319</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkM1LAzEUxIMfYK39B_SSi8eteftekt2TlOIXtHhQUU_lkSZtZLtdkkrpf2-lgnOZgfkxhxHiEtQQQNU30_eXz-mwVIqGgFiDxiPRK7U1hS3BHItzZSuFFSLAiegpoLowpD_OxCDnL7UXaQLQPXE7auV3s0lcLONiKbv11ifJq66JIf6mdi7zNm7cUnJKvMty3coc20Xj5ZaDTxfiNHCT_eDP--Lt_u51_FhMnh-exqNJEQGqTeGcDd5ZQOLKoKpMqciBKy0RBUsBgq28rnlulLcIpFyJjoI3mq01jrAvrg-7HWfHTUjcuphnXYorTrsZWNIWa73nrg5c9N7_14eP8AeXfFdp</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Guo, J.</creator><creator>Tantawi, S.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>An ultra-high power amplifier and switch arrays on single wafer</title><author>Guo, J. ; Tantawi, S.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-cc7fec7134a863086204c1c27444f74f1f78e59ad60e73140c23c4fe65a776c43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Linear particle accelerator</topic><topic>Microwave amplifiers</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Power amplifiers</topic><topic>Power semiconductor switches</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Semiconductor devices</topic><topic>Semiconductor diodes</topic><topic>Semiconductor waveguides</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Waveguide discontinuities</topic><toplevel>online_resources</toplevel><creatorcontrib>Guo, J.</creatorcontrib><creatorcontrib>Tantawi, S.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guo, J.</au><au>Tantawi, S.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An ultra-high power amplifier and switch arrays on single wafer</atitle><btitle>2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)</btitle><stitle>MWSYM</stitle><date>2004</date><risdate>2004</risdate><volume>2</volume><spage>1013</spage><epage>1016 Vol.2</epage><pages>1013-1016 Vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780383311</isbn><isbn>9780780383319</isbn><abstract>A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/MWSYM.2004.1339153</doi></addata></record> |
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identifier | ISSN: 0149-645X |
ispartof | 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.2, p.1013-1016 Vol.2 |
issn | 0149-645X 2576-7216 |
language | eng |
recordid | cdi_ieee_primary_1339153 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Linear particle accelerator Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Power amplifiers Power semiconductor switches Radio frequency Radiofrequency amplifiers Semiconductor devices Semiconductor diodes Semiconductor waveguides Switching, multiplexing, switched capacity circuits Waveguide discontinuities |
title | An ultra-high power amplifier and switch arrays on single wafer |
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