An ultra-high power amplifier and switch arrays on single wafer

A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overm...

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Hauptverfasser: Guo, J., Tantawi, S.G.
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description A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.
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ispartof 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.2, p.1013-1016 Vol.2
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subjects Amplifiers
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Linear particle accelerator
Microwave amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Power amplifiers
Power semiconductor switches
Radio frequency
Radiofrequency amplifiers
Semiconductor devices
Semiconductor diodes
Semiconductor waveguides
Switching, multiplexing, switched capacity circuits
Waveguide discontinuities
title An ultra-high power amplifier and switch arrays on single wafer
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