An ultra-high power amplifier and switch arrays on single wafer

A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overm...

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Bibliographische Detailangaben
Hauptverfasser: Guo, J., Tantawi, S.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE/sub 01/ mode. We hope that the use of an overmoded waveguide and the TE/sub 01/ mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1339153