DC drift of X-cut LiNbO/sub 3/ modulators

DC drift of X-cut LiNbO/sub 3/ modulators

DC drift of unbuffered dc bias electrode port of x-cut LiNbO/sub 3/ (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temp...

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Veröffentlicht in:IEEE photonics technology letters 2004-10, Vol.16 (10), p.2233-2235
Hauptverfasser: Nagata, H., Yagang Li, Bosenberg, W.R., Reiff, G.L.
Format: Artikel
Sprache:eng
Schlagworte:
Aging
Buffer layers
Electrodes
Intensity modulation
Life estimation
Life testing
Optical modulation
Performance evaluation
Temperature
Voltage
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Zusammenfassung:DC drift of unbuffered dc bias electrode port of x-cut LiNbO/sub 3/ (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temperature-voltage accelerated drift tests find temperature activation energy of 1.2 eV and a proportional relationship between drift rates and initially applied bias voltages. Such drift behaviors characteristic of unbuffered x-LN can demonstrate their high reliability with respect to dc bias drift.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.834486