Simulation study of a field emission triode structure using carbon-nanotube emitters
The device level simulation analysis without considering nanometer geometry of the emissive material is carried out on a self-aligned gated field emission triode structure that can be used for low electric-field emissive materials such as carbon nanotubes. The electric properties of the device, such...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2004-09, Vol.3 (3), p.404-411 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | Xie, C. |
| description | The device level simulation analysis without considering nanometer geometry of the emissive material is carried out on a self-aligned gated field emission triode structure that can be used for low electric-field emissive materials such as carbon nanotubes. The electric properties of the device, such as electric-field distribution, pixel capacitance, and gate controllability, are simulated using a commercially available field solver based on the boundary-element method. The simulation results show that the depletion-mode operation can eliminate high electric field near the triple-junction regions and produce better uniform emission, comparing enhanced mode operation. The detail of the depletion mode operation is discussed. We also calculate the effect of the gate thickness on pixel emission current and suggest control of the variation of gate layer depostion within 3% in short distance and 20%-30% over the whole display area. |
| doi_str_mv | 10.1109/TNANO.2004.834158 |
| format | Article |
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The electric properties of the device, such as electric-field distribution, pixel capacitance, and gate controllability, are simulated using a commercially available field solver based on the boundary-element method. The simulation results show that the depletion-mode operation can eliminate high electric field near the triple-junction regions and produce better uniform emission, comparing enhanced mode operation. The detail of the depletion mode operation is discussed. We also calculate the effect of the gate thickness on pixel emission current and suggest control of the variation of gate layer depostion within 3% in short distance and 20%-30% over the whole display area.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2004.834158</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Capacitance ; Carbon nanotubes ; Controllability ; Depletion ; Devices ; Displays ; Electronic tubes, masers ; Electronics ; Emissivity ; Exact sciences and technology ; Field emission ; Gates ; Geometry ; Mathematical analysis ; Nanoscale devices ; Organic materials ; Pixels ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-208a604bc0f659252483cdf936f36e86ea9cde1e262915138eb052cfb79b574a3</citedby><cites>FETCH-LOGICAL-c383t-208a604bc0f659252483cdf936f36e86ea9cde1e262915138eb052cfb79b574a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1331331$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1331331$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16087862$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Xie, C.</creatorcontrib><title>Simulation study of a field emission triode structure using carbon-nanotube emitters</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>The device level simulation analysis without considering nanometer geometry of the emissive material is carried out on a self-aligned gated field emission triode structure that can be used for low electric-field emissive materials such as carbon nanotubes. The electric properties of the device, such as electric-field distribution, pixel capacitance, and gate controllability, are simulated using a commercially available field solver based on the boundary-element method. The simulation results show that the depletion-mode operation can eliminate high electric field near the triple-junction regions and produce better uniform emission, comparing enhanced mode operation. The detail of the depletion mode operation is discussed. We also calculate the effect of the gate thickness on pixel emission current and suggest control of the variation of gate layer depostion within 3% in short distance and 20%-30% over the whole display area.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Carbon nanotubes</subject><subject>Controllability</subject><subject>Depletion</subject><subject>Devices</subject><subject>Displays</subject><subject>Electronic tubes, masers</subject><subject>Electronics</subject><subject>Emissivity</subject><subject>Exact sciences and technology</subject><subject>Field emission</subject><subject>Gates</subject><subject>Geometry</subject><subject>Mathematical analysis</subject><subject>Nanoscale devices</subject><subject>Organic materials</subject><subject>Pixels</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulation</subject><subject>Solid modeling</subject><subject>Thickness control</subject><subject>Vacuum microelectronics</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kctKJDEUhoMoqD0-gLgphNFVtblUUslSRJ0B0YUtuAup1IlEqiuay8K3N20LwiwGDpwD_3du_AgdE7wkBKuL1f3l_cOSYtwtJesIlzvogKiOtBhLvltrzkRLKH_eR4cpvWJMesHlAVo9-nWZTPZhblIu40cTXGMa52EaG1j7lDZKjj6MUIFYbC4RmpL8_NJYE4cwt7OZQy4DbPicIaZfaM-ZKcHRd16gp5vr1dWf9u7h9u_V5V1rmWS5pVgagbvBYie4opx2ktnRKSYcEyAFGGVHIEAFVYQTJmHAnFo39GrgfWfYAp1v577F8F4gZV0PtjBNZoZQkpZKkL5XSlXy7L8klYLSvu5foNN_wNdQ4ly_0IoSyrqe0gqRLWRjSCmC02_Rr0380ATrjR36yw69sUNv7ag9v78Hm2TN5KKZrU8_jQLLvh5RuZMt5wHgR2bsKz4BRTGTSw</recordid><startdate>20040901</startdate><enddate>20040901</enddate><creator>Xie, C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20040901</creationdate><title>Simulation study of a field emission triode structure using carbon-nanotube emitters</title><author>Xie, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-208a604bc0f659252483cdf936f36e86ea9cde1e262915138eb052cfb79b574a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Analytical models</topic><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Carbon nanotubes</topic><topic>Controllability</topic><topic>Depletion</topic><topic>Devices</topic><topic>Displays</topic><topic>Electronic tubes, masers</topic><topic>Electronics</topic><topic>Emissivity</topic><topic>Exact sciences and technology</topic><topic>Field emission</topic><topic>Gates</topic><topic>Geometry</topic><topic>Mathematical analysis</topic><topic>Nanoscale devices</topic><topic>Organic materials</topic><topic>Pixels</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Simulation</topic><topic>Solid modeling</topic><topic>Thickness control</topic><topic>Vacuum microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xie, C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xie, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation study of a field emission triode structure using carbon-nanotube emitters</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2004-09-01</date><risdate>2004</risdate><volume>3</volume><issue>3</issue><spage>404</spage><epage>411</epage><pages>404-411</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>The device level simulation analysis without considering nanometer geometry of the emissive material is carried out on a self-aligned gated field emission triode structure that can be used for low electric-field emissive materials such as carbon nanotubes. The electric properties of the device, such as electric-field distribution, pixel capacitance, and gate controllability, are simulated using a commercially available field solver based on the boundary-element method. The simulation results show that the depletion-mode operation can eliminate high electric field near the triple-junction regions and produce better uniform emission, comparing enhanced mode operation. The detail of the depletion mode operation is discussed. We also calculate the effect of the gate thickness on pixel emission current and suggest control of the variation of gate layer depostion within 3% in short distance and 20%-30% over the whole display area.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2004.834158</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1536-125X |
| ispartof | IEEE transactions on nanotechnology, 2004-09, Vol.3 (3), p.404-411 |
| issn | 1536-125X 1941-0085 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Capacitance Carbon nanotubes Controllability Depletion Devices Displays Electronic tubes, masers Electronics Emissivity Exact sciences and technology Field emission Gates Geometry Mathematical analysis Nanoscale devices Organic materials Pixels Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Solid modeling Thickness control Vacuum microelectronics |
| title | Simulation study of a field emission triode structure using carbon-nanotube emitters |
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