Sub-μs switching time in silicon-on-insulator Mach-Zehnder thermooptic switch

We have demonstrated both rise and fall times below 1 μs with 10%-90% modulation in a silicon-on-insulator thermooptical Mach-Zehnder switch. The switch is based on 9-μm-thick and 10-μm-wide single-mode rib waveguides. Very fast switching was achieved by using a differential control method. The swit...

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Veröffentlicht in:	IEEE photonics technology letters 2004-09, Vol.16 (9), p.2039-2041
Hauptverfasser:	Harjanne, M., Kapulainen, M., Aalto, T., Heimala, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Digital Electronics Integrated circuit technology Microprocessors Modulation Optical fiber couplers Optical interferometry Optical modulation Optical refraction Optical switches Optical variables control Optical waveguides Photonics Signal processing Silicon on insulator technology Switches Switching Thermal conductivity
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creator	Harjanne, M. Kapulainen, M. Aalto, T. Heimala, P.
description	We have demonstrated both rise and fall times below 1 μs with 10%-90% modulation in a silicon-on-insulator thermooptical Mach-Zehnder switch. The switch is based on 9-μm-thick and 10-μm-wide single-mode rib waveguides. Very fast switching was achieved by using a differential control method. The switch was driven with a digital signal processor accompanied by simple electronic circuitry.
doi_str_mv	10.1109/LPT.2004.833896
format	Article
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subjects	Digital Electronics Integrated circuit technology Microprocessors Modulation Optical fiber couplers Optical interferometry Optical modulation Optical refraction Optical switches Optical variables control Optical waveguides Photonics Signal processing Silicon on insulator technology Switches Switching Thermal conductivity
title	Sub-μs switching time in silicon-on-insulator Mach-Zehnder thermooptic switch
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