Sub-μs switching time in silicon-on-insulator Mach-Zehnder thermooptic switch

Sub-μs switching time in silicon-on-insulator Mach-Zehnder thermooptic switch

We have demonstrated both rise and fall times below 1 μs with 10%-90% modulation in a silicon-on-insulator thermooptical Mach-Zehnder switch. The switch is based on 9-μm-thick and 10-μm-wide single-mode rib waveguides. Very fast switching was achieved by using a differential control method. The swit...

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Veröffentlicht in:IEEE photonics technology letters 2004-09, Vol.16 (9), p.2039-2041
Hauptverfasser: Harjanne, M., Kapulainen, M., Aalto, T., Heimala, P.
Format: Artikel
Sprache:eng
Schlagworte:
Digital
Electronics
Integrated circuit technology
Microprocessors
Modulation
Optical fiber couplers
Optical interferometry
Optical modulation
Optical refraction
Optical switches
Optical variables control
Optical waveguides
Photonics
Signal processing
Silicon on insulator technology
Switches
Switching
Thermal conductivity
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Beschreibung
Zusammenfassung:We have demonstrated both rise and fall times below 1 μs with 10%-90% modulation in a silicon-on-insulator thermooptical Mach-Zehnder switch. The switch is based on 9-μm-thick and 10-μm-wide single-mode rib waveguides. Very fast switching was achieved by using a differential control method. The switch was driven with a digital signal processor accompanied by simple electronic circuitry.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.833896