PRAM process technology

PRAM(Phase-Change RAM) is a promising memory that can solve the problems of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. We presen...

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Bibliographische Detailangaben
Hauptverfasser:	Koh, G.H., Hwang, Y.N., Lee, S.H., Lee, S.Y., Ryoo, K.C., Park, J.H., Song, Y.J., Ahn, S.J., Jeong, C.W., Yeung, F., Kim, Y.-T., Park, J.-B., Jeong, G.T., Jeong, H.S., Kim, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials CMOS technology Costs Flash memory Phase change materials Phase change random access memory Random access memory Read-write memory Switches Writing
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Beschreibung
Zusammenfassung:	PRAM(Phase-Change RAM) is a promising memory that can solve the problems of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. We presented process factors which affect the writing current and the result of improvement. Finally we demonstrated results of 64Mb PRAM integration based on 0.18/spl mu/m CMOS technology.
DOI:	10.1109/ICICDT.2004.1309906