Reliability estimation from zero-failure LiNbO/sub 3/ modulator bias drift data
Since x-cut LiNbO/sub 3/ (LN) optical modulators exhibit bias drift that rolls over around a voltage limit of most systems, their laboratory aging tests sometimes yield zero-failures and do not generate sufficient estimates of device reliability. In this regard, a modified calculation method is prop...
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Veröffentlicht in: | IEEE photonics technology letters 2004-06, Vol.16 (6), p.1477-1479 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Since x-cut LiNbO/sub 3/ (LN) optical modulators exhibit bias drift that rolls over around a voltage limit of most systems, their laboratory aging tests sometimes yield zero-failures and do not generate sufficient estimates of device reliability. In this regard, a modified calculation method is proposed and applied to data of OC192 x-cut LN modulators. The calculation presumes a time-independent probability that modulators are expected to have a voltage peak higher than the failure criterion. The obtained small failure rate is considered to be consistent with a rolling-over type drift behavior of these modulators. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2004.827857 |