MOCVD grown solar-blind photodetector arrays

We report on the growth and fabrication of back-illuminated solar-blind photodetector array based on the AlGaN material system using low-pressure metalorganic chemical vapor deposition. Discrete photodetector devices exhibited a high external quantum efficiency of 58% and 256/spl times/256 photodete...

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Hauptverfasser:	Uttiya Chowdhury, Collins, C.J., Wong, M.M., Zhu, T.G., Denyszyn, J.C., Choi, J.-H., Campbell, J.C., Hairston, A., Lamarre, P., Wong, K.K., Cooke, C., Mullarkey, J., Reine, M., Dupuis, R.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Aluminum gallium nitride Chemical vapor deposition Lighting MOCVD Optical arrays Optical device fabrication P-i-n diodes Photodetectors Power supplies
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Beschreibung
Zusammenfassung:	We report on the growth and fabrication of back-illuminated solar-blind photodetector array based on the AlGaN material system using low-pressure metalorganic chemical vapor deposition. Discrete photodetector devices exhibited a high external quantum efficiency of 58% and 256/spl times/256 photodetector arrays exhibited a high operability of >99%.