Quasi-3-D simulation of high-brightness tapered lasers

We present a simulation tool useful to optimize the design of semiconductor tapered lasers and to study the physical processes inside of them. This is achieved by using a state-of-the-art quasi-three-dimensional (quasi-3-D) electrical and thermal model, coupled to a two-dimensional (2-D) wide-angle...

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Veröffentlicht in:IEEE journal of quantum electronics 2004-05, Vol.40 (5), p.463-472
Hauptverfasser: Borruel, L., Sujecki, S., Moreno, P., Wykes, J., Krakowski, M., Sumpf, B., Sewell, P., Auzanneau, S.-C., Wenzel, H., Rodriguez, D., Benson, T.M., Larkins, E.C., Esquivias, I.
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Sprache:eng
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Zusammenfassung:We present a simulation tool useful to optimize the design of semiconductor tapered lasers and to study the physical processes inside of them. This is achieved by using a state-of-the-art quasi-three-dimensional (quasi-3-D) electrical and thermal model, coupled to a two-dimensional (2-D) wide-angle beam propagation method optical model. A calibration procedure of model parameters is proposed to contribute to the development of reliable simulation tools. Different laser diodes with a tapered gain section, emitting at 735 and 975 nm, are used to validate the model through the extensive comparison of experimental and simulated results. The suitability of 2-D and 3-D electrical, thermal, and optical models is discussed in terms accuracy and computational effort.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2004.826424