A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory

A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory

A Metal Oxide Nitride Oxide Semiconductor (MONOS) Asymmetric Double Gate (ADG) Nonvolatile Memory (NVM) cell is proposed. In addition to the improved scalability of the NVM cell made possible by the double-gate structure, the 2 conducting channels also provide a 2-bit per cell storage mechanism. The...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kam Hung Yuen, Tsz Yin Man, Chan, Mansun
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Dielectrics
Flash memory
MONOS devices
MOSFET circuits
Nonvolatile memory
Numerical simulation
Scalability
Silicon
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A Metal Oxide Nitride Oxide Semiconductor (MONOS) Asymmetric Double Gate (ADG) Nonvolatile Memory (NVM) cell is proposed. In addition to the improved scalability of the NVM cell made possible by the double-gate structure, the 2 conducting channels also provide a 2-bit per cell storage mechanism. The scalability of the device down to 50 nm is demonstrated by numerical simulation. The operation mechanisms including read, program and erase in an array structure are also studied and described in this paper.
DOI:10.1109/EDSSC.2003.1283483