Effect of reverse measurement on the HC instability evaluation of MOSFETs

Effect of reverse measurement on the HC instability evaluation of MOSFETs

Anomalous hot-carrier (HC) degradation is found in some products attributable to the reverse device measurement. Disproportionately great reverse degradation is found the core problem. Assuming that the HC degradation is a power function of time, the anomalous degradation is theoretically characteri...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Katto, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Degradation
Hot carriers
Intrusion detection
MOSFETs
Power supplies
Scattering
Stress measurement
Testing
Threshold voltage
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Beschreibung
Zusammenfassung:Anomalous hot-carrier (HC) degradation is found in some products attributable to the reverse device measurement. Disproportionately great reverse degradation is found the core problem. Assuming that the HC degradation is a power function of time, the anomalous degradation is theoretically characterized using the parameters of HC degradation. It is confirmed that the time-dependence slope in the reverse direction and voltage dependence factor are important parameters.
DOI:10.1109/IRWS.2003.1283317