Surface treatment of inductively coupled plasma on p-GaN

A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl/sub 2/ inductively coupled plasma (ICP).

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Bibliographische Detailangaben
Hauptverfasser:	Tseng, C.T., Su, S.H., Yokoyama, M., Chen, S.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conductivity Contact resistance Electrical resistance measurement Etching Gallium nitride Nitrogen Ohmic contacts Plasma applications Surface resistance Surface treatment
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Beschreibung
Zusammenfassung:	A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl/sub 2/ inductively coupled plasma (ICP).
DOI:	10.1109/CLEOPR.2003.1277099