Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.

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Bibliographische Detailangaben
Hauptverfasser:	Hannigan, J., Guoqiang Cui, Loeckenhoff, R., Foster, D., Matinaga, F.M., Wang, H., Raymer, M.G., Holland, M., Bhonghale, S., Mosor, S., Chatterjee, S., Gibbs, H.M., Khitrova, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Distributed Bragg reflectors Electrodynamics Gallium arsenide Information processing Microstructure Mirrors Optical coupling Optical device fabrication Quantum dots US Department of Transportation
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Beschreibung
Zusammenfassung:	A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.
DOI:	10.1109/QELS.2003.238565