A simulation model for cathodoluminescence in the scanning electron microscope
An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain th...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1992-04, Vol.39 (4), p.782-791 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 791 |
|---|---|
| container_issue | 4 |
| container_start_page | 782 |
| container_title | IEEE transactions on electron devices |
| container_volume | 39 |
| creator | Phang, J.C.H. Pey, K.L. Chang, D.S.H. |
| description | An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated.< > |
| doi_str_mv | 10.1109/16.127466 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_127466</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>127466</ieee_id><sourcerecordid>28555606</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-5f3ad746aedcd32f9c2d182fb83d988afddfa2e3eda101a0fe725e871b77ce0b3</originalsourceid><addsrcrecordid>eNqFkD1PwzAQhi0EEqUwsDJ5QEgMKf6InWSsKr6kChaYI9c-UyPHLnY68O9JlApGptNJz_vo7kXokpIFpaS5o3JBWVVKeYRmVIiqaGQpj9GMEFoXDa_5KTrL-XNYZVmyGXpZ4uy6vVe9iwF30YDHNiasVb-NJvp95wJkDUEDdgH3W8BZqxBc-MDgQfdpjDmdYtZxB-foxCqf4eIw5-j94f5t9VSsXx-fV8t1oTmv-kJYrsxwpQKjDWe20czQmtlNzU1T18oaYxUDDkZRQhWxUDEBdUU3VaWBbPgc3UzeXYpfe8h927nhSu9VgLjPLWsIrziV_4O1EEKSEbydwPGVnMC2u-Q6lb5bStqx2pbKdqp2YK8PUjWU4W1SQbv8GxBMlA3jA3Y1YQ4A_nST4wfh2IH-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28555606</pqid></control><display><type>article</type><title>A simulation model for cathodoluminescence in the scanning electron microscope</title><source>IEEE Electronic Library (IEL)</source><creator>Phang, J.C.H. ; Pey, K.L. ; Chang, D.S.H.</creator><creatorcontrib>Phang, J.C.H. ; Pey, K.L. ; Chang, D.S.H.</creatorcontrib><description>An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.127466</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Electron beams ; Electron, positron and ion microscopes, electron diffractometers and related techniques ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Monte Carlo methods ; Optical losses ; Optical scattering ; Physics ; Radiative recombination ; Scanning electron microscopy ; Spontaneous emission ; Surface treatment ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.782-791</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-5f3ad746aedcd32f9c2d182fb83d988afddfa2e3eda101a0fe725e871b77ce0b3</citedby><cites>FETCH-LOGICAL-c337t-5f3ad746aedcd32f9c2d182fb83d988afddfa2e3eda101a0fe725e871b77ce0b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/127466$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/127466$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5254923$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Phang, J.C.H.</creatorcontrib><creatorcontrib>Pey, K.L.</creatorcontrib><creatorcontrib>Chang, D.S.H.</creatorcontrib><title>A simulation model for cathodoluminescence in the scanning electron microscope</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated.< ></description><subject>Absorption</subject><subject>Electron beams</subject><subject>Electron, positron and ion microscopes, electron diffractometers and related techniques</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Monte Carlo methods</subject><subject>Optical losses</subject><subject>Optical scattering</subject><subject>Physics</subject><subject>Radiative recombination</subject><subject>Scanning electron microscopy</subject><subject>Spontaneous emission</subject><subject>Surface treatment</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqUwsDJ5QEgMKf6InWSsKr6kChaYI9c-UyPHLnY68O9JlApGptNJz_vo7kXokpIFpaS5o3JBWVVKeYRmVIiqaGQpj9GMEFoXDa_5KTrL-XNYZVmyGXpZ4uy6vVe9iwF30YDHNiasVb-NJvp95wJkDUEDdgH3W8BZqxBc-MDgQfdpjDmdYtZxB-foxCqf4eIw5-j94f5t9VSsXx-fV8t1oTmv-kJYrsxwpQKjDWe20czQmtlNzU1T18oaYxUDDkZRQhWxUDEBdUU3VaWBbPgc3UzeXYpfe8h927nhSu9VgLjPLWsIrziV_4O1EEKSEbydwPGVnMC2u-Q6lb5bStqx2pbKdqp2YK8PUjWU4W1SQbv8GxBMlA3jA3Y1YQ4A_nST4wfh2IH-</recordid><startdate>19920401</startdate><enddate>19920401</enddate><creator>Phang, J.C.H.</creator><creator>Pey, K.L.</creator><creator>Chang, D.S.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19920401</creationdate><title>A simulation model for cathodoluminescence in the scanning electron microscope</title><author>Phang, J.C.H. ; Pey, K.L. ; Chang, D.S.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-5f3ad746aedcd32f9c2d182fb83d988afddfa2e3eda101a0fe725e871b77ce0b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Absorption</topic><topic>Electron beams</topic><topic>Electron, positron and ion microscopes, electron diffractometers and related techniques</topic><topic>Exact sciences and technology</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Monte Carlo methods</topic><topic>Optical losses</topic><topic>Optical scattering</topic><topic>Physics</topic><topic>Radiative recombination</topic><topic>Scanning electron microscopy</topic><topic>Spontaneous emission</topic><topic>Surface treatment</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Phang, J.C.H.</creatorcontrib><creatorcontrib>Pey, K.L.</creatorcontrib><creatorcontrib>Chang, D.S.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Phang, J.C.H.</au><au>Pey, K.L.</au><au>Chang, D.S.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A simulation model for cathodoluminescence in the scanning electron microscope</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1992-04-01</date><risdate>1992</risdate><volume>39</volume><issue>4</issue><spage>782</spage><epage>791</epage><pages>782-791</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.127466</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.782-791 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_127466 |
| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Electron beams Electron, positron and ion microscopes, electron diffractometers and related techniques Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Monte Carlo methods Optical losses Optical scattering Physics Radiative recombination Scanning electron microscopy Spontaneous emission Surface treatment Voltage |
| title | A simulation model for cathodoluminescence in the scanning electron microscope |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T22%3A53%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20simulation%20model%20for%20cathodoluminescence%20in%20the%20scanning%20electron%20microscope&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Phang,%20J.C.H.&rft.date=1992-04-01&rft.volume=39&rft.issue=4&rft.spage=782&rft.epage=791&rft.pages=782-791&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.127466&rft_dat=%3Cproquest_RIE%3E28555606%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28555606&rft_id=info:pmid/&rft_ieee_id=127466&rfr_iscdi=true |