A simulation model for cathodoluminescence in the scanning electron microscope

An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken's (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated.< >