Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In/sub 0.18/Ga/sub 0.82/P/sub 0.2//ln/sub 0.4/Ga/sub 0.6/P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation respons...

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Hauptverfasser: Kuo, H.C., Lu, T.C., Chang, Y.S., Lai, F.Y., Kao, G.C., Laih, L.H., Wang, S.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Apertures
Extinction ratio
Frequency modulation
Gallium arsenide
Local area networks
MOCVD
Surface emitting lasers
Temperature
Threshold current
Vertical cavity surface emitting lasers
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Zusammenfassung:In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In/sub 0.18/Ga/sub 0.82/P/sub 0.2//ln/sub 0.4/Ga/sub 0.6/P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5 Gb/s from 25C to 85C.
DOI:10.1109/CLEOPR.2003.1274626