Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures

Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures

We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.

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Bibliographische Detailangaben
Hauptverfasser: Yung-Chen Cheng, Horng-Shyang Chen, Yang, C.C., Zhe-Chuang Feng, Gang Alan Li
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Doping
Fabry-Perot
Gallium nitride
Indium
Light emitting diodes
MOCVD
Ohmic contacts
Photoluminescence
Temperature distribution
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Beschreibung
Zusammenfassung:We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.
DOI:10.1109/CLEOPR.2003.1274540