Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN films

Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN films

In this paper, we report the role played by AlGaN/GaN short period strained-layer superlattices (SPSLS) on the threading dislocation (TD) density reduction in GaN films. TD annihilation and de-multiplication processes were observed to account for the etching pit densities (EPD) reduction in GaN film...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Cheng-Wei Huang, Su-Fen Tseng, Cheng-Liang Wang, Yu-Li Tsai, Wei-Tsai Liao, Jyh-Rong Gong, Wen-Jen Lin, Long-Jang Hu, Ya-Tung Cherng
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Artificial intelligence
Chemical technology
Diode lasers
Etching
Gallium nitride
Light emitting diodes
Materials science and technology
Optical materials
Superlattices
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we report the role played by AlGaN/GaN short period strained-layer superlattices (SPSLS) on the threading dislocation (TD) density reduction in GaN films. TD annihilation and de-multiplication processes were observed to account for the etching pit densities (EPD) reduction in GaN films involving AlGaN/GaN intermediate SPSLS structures. Transmission electron microscopy (TEM) was employed to characterize the microstructural properties of GaN films.
DOI:10.1109/ISDRS.2003.1272014