Edge breakdown in 4H-SiC avalanche photodiodes
We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents,
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| Veröffentlicht in: | IEEE journal of quantum electronics 2004-03, Vol.40 (3), p.321-324 |
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| container_end_page | 324 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 40 |
| creator | Beck, A.L. Bo Yang Xiangyi Guo Campbell, J.C. |
| description | We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, |
| doi_str_mv | 10.1109/JQE.2003.823033 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1271365</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1271365</ieee_id><sourcerecordid>2427733391</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-fb69c6fd44d08ff017e303dd90718fd750060d8144161d41d5e0180ddabdb2693</originalsourceid><addsrcrecordid>eNpdkMFLwzAUh4MoOKdnD16KoLd2L03SpEcZ1SkDEfUc0iZxnV0zk03xvzejg4GnR3i_9-PLh9AlhgxjKCdPL1WWA5BM5AQIOUIjzJhIMcfkGI0AsEhLXPJTdBbCMj4pFTBCWaU_TFJ7oz61--mTtk_oLH1tp4n6Vp3qm4VJ1gu3cbp12oRzdGJVF8zFfo7R-331Np2l8-eHx-ndPG0I5ZvU1kXZFFZTqkFYC5ibyKR1CRwLqzkDKECLyIALrCnWzEQ-0FrVus6LkozR7dC79u5ra8JGrtrQmC4SGbcNMo-fLBknMXj9L7h0W99HNikEBSo47NomQ6jxLgRvrFz7dqX8r8Qgd_JklCd38uQgL17c7GtVaFRnfTTRhsMZYxQ4sJi7GnKtMeawzqP0gpE_Erx0fQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884048709</pqid></control><display><type>article</type><title>Edge breakdown in 4H-SiC avalanche photodiodes</title><source>IEEE Electronic Library (IEL)</source><creator>Beck, A.L. ; Bo Yang ; Xiangyi Guo ; Campbell, J.C.</creator><creatorcontrib>Beck, A.L. ; Bo Yang ; Xiangyi Guo ; Campbell, J.C.</creatorcontrib><description>We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-/spl mu/m-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2003.823033</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Avalanche breakdown ; Avalanche photodiodes ; Dark current ; Electric breakdown ; Electronics ; Etching ; Exact sciences and technology ; Optoelectronic devices ; Photoconductivity ; Photodetectors ; Photodiodes; phototransistors; photoresistors ; Resists ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Shape ; Silicon carbide</subject><ispartof>IEEE journal of quantum electronics, 2004-03, Vol.40 (3), p.321-324</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-fb69c6fd44d08ff017e303dd90718fd750060d8144161d41d5e0180ddabdb2693</citedby><cites>FETCH-LOGICAL-c347t-fb69c6fd44d08ff017e303dd90718fd750060d8144161d41d5e0180ddabdb2693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1271365$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1271365$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15540705$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Beck, A.L.</creatorcontrib><creatorcontrib>Bo Yang</creatorcontrib><creatorcontrib>Xiangyi Guo</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><title>Edge breakdown in 4H-SiC avalanche photodiodes</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-/spl mu/m-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.</description><subject>Applied sciences</subject><subject>Avalanche breakdown</subject><subject>Avalanche photodiodes</subject><subject>Dark current</subject><subject>Electric breakdown</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Photoconductivity</subject><subject>Photodetectors</subject><subject>Photodiodes; phototransistors; photoresistors</subject><subject>Resists</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Shape</subject><subject>Silicon carbide</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMFLwzAUh4MoOKdnD16KoLd2L03SpEcZ1SkDEfUc0iZxnV0zk03xvzejg4GnR3i_9-PLh9AlhgxjKCdPL1WWA5BM5AQIOUIjzJhIMcfkGI0AsEhLXPJTdBbCMj4pFTBCWaU_TFJ7oz61--mTtk_oLH1tp4n6Vp3qm4VJ1gu3cbp12oRzdGJVF8zFfo7R-331Np2l8-eHx-ndPG0I5ZvU1kXZFFZTqkFYC5ibyKR1CRwLqzkDKECLyIALrCnWzEQ-0FrVus6LkozR7dC79u5ra8JGrtrQmC4SGbcNMo-fLBknMXj9L7h0W99HNikEBSo47NomQ6jxLgRvrFz7dqX8r8Qgd_JklCd38uQgL17c7GtVaFRnfTTRhsMZYxQ4sJi7GnKtMeawzqP0gpE_Erx0fQ</recordid><startdate>20040301</startdate><enddate>20040301</enddate><creator>Beck, A.L.</creator><creator>Bo Yang</creator><creator>Xiangyi Guo</creator><creator>Campbell, J.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20040301</creationdate><title>Edge breakdown in 4H-SiC avalanche photodiodes</title><author>Beck, A.L. ; Bo Yang ; Xiangyi Guo ; Campbell, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-fb69c6fd44d08ff017e303dd90718fd750060d8144161d41d5e0180ddabdb2693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Avalanche breakdown</topic><topic>Avalanche photodiodes</topic><topic>Dark current</topic><topic>Electric breakdown</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Photoconductivity</topic><topic>Photodetectors</topic><topic>Photodiodes; phototransistors; photoresistors</topic><topic>Resists</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Shape</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beck, A.L.</creatorcontrib><creatorcontrib>Bo Yang</creatorcontrib><creatorcontrib>Xiangyi Guo</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Beck, A.L.</au><au>Bo Yang</au><au>Xiangyi Guo</au><au>Campbell, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Edge breakdown in 4H-SiC avalanche photodiodes</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2004-03-01</date><risdate>2004</risdate><volume>40</volume><issue>3</issue><spage>321</spage><epage>324</epage><pages>321-324</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-/spl mu/m-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JQE.2003.823033</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 2004-03, Vol.40 (3), p.321-324 |
| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Avalanche breakdown Avalanche photodiodes Dark current Electric breakdown Electronics Etching Exact sciences and technology Optoelectronic devices Photoconductivity Photodetectors Photodiodes phototransistors photoresistors Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Silicon carbide |
| title | Edge breakdown in 4H-SiC avalanche photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T16%3A56%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Edge%20breakdown%20in%204H-SiC%20avalanche%20photodiodes&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Beck,%20A.L.&rft.date=2004-03-01&rft.volume=40&rft.issue=3&rft.spage=321&rft.epage=324&rft.pages=321-324&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2003.823033&rft_dat=%3Cproquest_RIE%3E2427733391%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884048709&rft_id=info:pmid/&rft_ieee_id=1271365&rfr_iscdi=true |