Edge breakdown in 4H-SiC avalanche photodiodes

Edge breakdown in 4H-SiC avalanche photodiodes

We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents,

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Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 2004-03, Vol.40 (3), p.321-324
Hauptverfasser: Beck, A.L., Bo Yang, Xiangyi Guo, Campbell, J.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Avalanche breakdown
Avalanche photodiodes
Dark current
Electric breakdown
Electronics
Etching
Exact sciences and technology
Optoelectronic devices
Photoconductivity
Photodetectors
Photodiodes
phototransistors
photoresistors
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape
Silicon carbide
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Beschreibung
Zusammenfassung:We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents,
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2003.823033