Impact ionization in strained-Si/SiGe heterostructures
We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly h...
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| creator | Waldron, N.S. Pitera, A.J. Lee, M.L. Fitzgerald, E.A. del Alamo, J.A. |
| description | We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions. |
| doi_str_mv | 10.1109/IEDM.2003.1269404 |
| format | Conference Proceeding |
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We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2003.1269404</doi></addata></record> |
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| ispartof | IEEE International Electron Devices Meeting 2003, 2003, p.33.7.1-33.7.4 |
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| language | eng |
| recordid | cdi_ieee_primary_1269404 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Buffer layers CMOS technology Germanium silicon alloys Impact ionization Radio frequency Resistors Rough surfaces Silicon germanium Testing Thermal conductivity |
| title | Impact ionization in strained-Si/SiGe heterostructures |
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