Impact ionization in strained-Si/SiGe heterostructures

Impact ionization in strained-Si/SiGe heterostructures

We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly h...

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Bibliographische Detailangaben
Hauptverfasser: Waldron, N.S., Pitera, A.J., Lee, M.L., Fitzgerald, E.A., del Alamo, J.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Buffer layers
CMOS technology
Germanium silicon alloys
Impact ionization
Radio frequency
Resistors
Rough surfaces
Silicon germanium
Testing
Thermal conductivity
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Zusammenfassung:We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions.
DOI:10.1109/IEDM.2003.1269404