The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips

The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips

Proton bombardment technology is integrated into the standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10/sup 15/ cm/sup -2/, 100 /spl mu/m deep bombardment through mask windows, /spl rho//sub s/=20k/spl sim/50k /spl Omega/.cm r...

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Hauptverfasser: Tang, D.D., Lin, W.C., Lai, L.S., Wang, C.H., Lee, L.P., Hsu, H.M., Wu, C.M., Chang, C.W., Lien, W.Y., Chao, C.P., Lee, C.Y., Chern, G.J., Guo, J.C., Chang, C.S., Sun, Y.C., Du, D.S., Lan, K.C., Lin, L.F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Circuits
Coils
Conductivity
Inductors
Manufacturing processes
Protons
Radio frequency
Silicon
Substrates
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Zusammenfassung:Proton bombardment technology is integrated into the standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10/sup 15/ cm/sup -2/, 100 /spl mu/m deep bombardment through mask windows, /spl rho//sub s/=20k/spl sim/50k /spl Omega/.cm regions are formed, which are thermally stable at 200/spl deg/C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.
DOI:10.1109/IEDM.2003.1269370