The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes
In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).
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| creator | Tsann-Bim Chiou Shih-En Tseng Chen, A.C. |
| description | In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE). |
| doi_str_mv | 10.1109/IMNC.2003.1268504 |
| format | Conference Proceeding |
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Shih-En Tseng ; Chen, A.C.</creator><creatorcontrib>Tsann-Bim Chiou ; Shih-En Tseng ; Chen, A.C.</creatorcontrib><description>In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).</description><identifier>ISBN: 4891140402</identifier><identifier>ISBN: 9784891140403</identifier><identifier>DOI: 10.1109/IMNC.2003.1268504</identifier><language>eng</language><publisher>IEEE</publisher><subject>Application specific integrated circuits ; Costs ; Error correction ; Focusing ; Integrated circuit manufacture ; Integrated circuit technology ; Lighting ; Lithography ; Space technology</subject><ispartof>Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference, 2003, p.32-33</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1268504$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1268504$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tsann-Bim Chiou</creatorcontrib><creatorcontrib>Shih-En Tseng</creatorcontrib><creatorcontrib>Chen, A.C.</creatorcontrib><title>The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes</title><title>Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference</title><addtitle>IMNC</addtitle><description>In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).</description><subject>Application specific integrated circuits</subject><subject>Costs</subject><subject>Error correction</subject><subject>Focusing</subject><subject>Integrated circuit manufacture</subject><subject>Integrated circuit technology</subject><subject>Lighting</subject><subject>Lithography</subject><subject>Space technology</subject><isbn>4891140402</isbn><isbn>9784891140403</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUEtLw0AYXBBBrf0B4uU76qF1nzF7lNRqIdpL72UfX9qVdDfkAfYv-KsNteBcZoZh5jCE3DE6Z4zqp9XHZzHnlIo541muqLwgNzLXjEkqKb8i0677oiOEVorqa_Kz2SMczC6GfvAIqYIm9Rj7YGrA7yZ1Q4vQp1RDiH5w6KFYgIke1iVg26a2GwPoxxGfBlvjf8mHJo3-YbEoH6FKLWQK4uHUlSfVo9vHVKfdEWLy2N2Sy8rUHU7PPCGb5eumeJ-V67dV8VLOgqb9zEpurNdcokX_bLmR2qPhwjEtGJfaUWFzwZwSxlJdceWYxQy9U1lGPcvFhNz_zQZE3DZtOJj2uD2_JX4BaexgmA</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Tsann-Bim Chiou</creator><creator>Shih-En Tseng</creator><creator>Chen, A.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes</title><author>Tsann-Bim Chiou ; Shih-En Tseng ; Chen, A.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b42abd924ebed7b2a49dea23c1931249c03b831c53ab09f25c1be6edc5660d183</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Application specific integrated circuits</topic><topic>Costs</topic><topic>Error correction</topic><topic>Focusing</topic><topic>Integrated circuit manufacture</topic><topic>Integrated circuit technology</topic><topic>Lighting</topic><topic>Lithography</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsann-Bim Chiou</creatorcontrib><creatorcontrib>Shih-En Tseng</creatorcontrib><creatorcontrib>Chen, A.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsann-Bim Chiou</au><au>Shih-En Tseng</au><au>Chen, A.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes</atitle><btitle>Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference</btitle><stitle>IMNC</stitle><date>2003</date><risdate>2003</risdate><spage>32</spage><epage>33</epage><pages>32-33</pages><isbn>4891140402</isbn><isbn>9784891140403</isbn><abstract>In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).</abstract><pub>IEEE</pub><doi>10.1109/IMNC.2003.1268504</doi><tpages>2</tpages></addata></record> |
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| identifier | ISBN: 4891140402 |
| ispartof | Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference, 2003, p.32-33 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Application specific integrated circuits Costs Error correction Focusing Integrated circuit manufacture Integrated circuit technology Lighting Lithography Space technology |
| title | The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes |
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