The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes

In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).

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Bibliographische Detailangaben
Hauptverfasser:	Tsann-Bim Chiou, Shih-En Tseng, Chen, A.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Application specific integrated circuits Costs Error correction Focusing Integrated circuit manufacture Integrated circuit technology Lighting Lithography Space technology
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Beschreibung
Zusammenfassung:	In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).
DOI:	10.1109/IMNC.2003.1268504